PART |
Description |
Maker |
BS62LV1600ECG70 BS62LV1600ECG55 BS62LV1600FCP55 BS |
Very Low Power CMOS SRAM 2M X 8 bit 极低功耗CMOS SRAMx 8 Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PBGA48 Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PDSO44
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BRILLIANCE SEMICONDUCTOR INC BRILLIANCE SEMICONDUCTOR, Inc. Brilliance Semiconducto...
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BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48 Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48 Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes From old datasheet system Asynchronous 8M(1Mx8) bits Static RAM
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Brilliance Semiconducto... BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
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WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 512K X 8 STANDARD SRAM, 17 ns, CDSO32 512Kx8 Monolithic SRAM(512Kx8单片静态RAM(BiCMOS,存取时间17ns 512Kx8 Monolithic SRAM(512Kx8单片静态RAM(BiCMOS,存取时间20ns
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White Electronic Designs Corporation
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CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟 CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
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BS62LV1027DC70 BS62LV1027PC70 BS62LV1027TC70 BS62L |
Very Low Power CMOS SRAM 128K X 8 bit 非常低功耗CMOS SRAM 128K的8
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BRILLIANCE SEMICONDUCTOR, Inc.
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M065608E-V30 |
SRAM Chip: 128K x 8 Very Low Power CMOS SRAM Rad Tolerant
|
Atmel Corporation
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AS5LC512K8F-20L_XT AS5LC512K8 AS5LC512K8DJ-12L_883 |
512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT
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AUSTIN[Austin Semiconductor]
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BS616UV1010EIP10 BS616UV1010DIG10 BS616UV1010AI10 |
Ultra Low Power CMOS SRAM 64K X 16 bit 超低功耗CMOS SRAM 64K的16
|
BRILLIANCE SEMICONDUCTOR, INC.
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HY62UF08401C-SSI HY62UF08401C-DSI |
High Speed, Super Low Power and 4Mbit Full CMOS SRAM 高速,超低功耗和4Mbit全CMOS SRAM
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Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
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HM62V16100I HM62V16100LBPI-4 HM62V16100LBPI-4SL HM |
Memory>Low Power SRAM Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit)
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HITACHI[Hitachi Semiconductor] Renesas Electronics Corporation
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UC62LS2048KI-25 UC62LS2048 UC62LS2048AC-20 UC62LS2 |
Low Power CMOS SRAM 低功耗CMOS SRAM
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Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
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HY62LF16404C |
Super Low Power Slow SRAM - 4Mb High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
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Hynix Semiconductor
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